| PART |
Description |
Maker |
| 2SK1739A |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOS FET for UHF TV BROADCAST TRANSMITTER
|
Toshiba Semiconductor
Sanyo Semicon Device
|
| 2SK1310A EA09774 |
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
From old datasheet system
RF POWER MOS FET for UHF TV ROADCAST TRANSMITTER
|
Toshiba Semiconductor
|
| 2SK3391JXTL-E 2SK339107 |
Silicon N-Channel MOS FET UHF Power Amplifier
|
Renesas Electronics Corporation
|
| 2SK3391 2SK3391JX |
Silicon N-Channel MOS FET UHF Power Amplifier
|
RENESAS[Renesas Electronics Corporation]
|
| NE5511279A |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
|
California Eastern Labs
|
| 2SK2795 |
From old datasheet system
Silicon N Channel MOS FET UHF Power Amplifier
|
Hitachi Semiconductor
|
| 2SK3174A |
From old datasheet system
Silicon N Channel MOS FET UHF Power Amplifier
|
HITACHI[Hitachi Semiconductor]
|
| 3SK309 |
Silicon N Channel MOS FET
GaAs N Channel Dual Gate MES FET UHF RF Amplifier
|
Hitachi Semiconductor
|
| 2SK2095N A5800286 |
Transistors > MOS FET > Power MOS FET
Small switching (60V, 10A)
From old datasheet system
|
ROHM[Rohm]
|
| BB503CCS-TL-E |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|
| BB502M BB502MBS-TL-E |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|
| BB502CBS-TL-E BB502C |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|
